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MICROCHIP APT75DQ60BGRoHS

Manufacturer
MICROCHIP
MPN
APT75DQ60BG
LCSC Part #
C5444775
Packaging
TO-247-2
Customer #
Key Attributes
Diode 600V TO-247-2
Datasheetpdf iconMICROCHIP APT75DQ60BG
In-Stock: 9
9 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.8947$ 3.89
10+$ 3.4374$ 34.37
30+$ 3.164$ 94.92
100+$ 2.8873$ 288.73
500+$ 2.7603$ 1380.15
1,000+$ 2.7034$ 2703.40
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerMICROCHIP
PackagingTO-247-2
Reverse Recovery Time (trr)29ns
Diode Configuration1 Independent
Voltage - DC Reverse (Vr) (Max)600V
Operating Junction Temperature Range-55℃~+175℃
Voltage - Forward(Vf@If)2V
Reverse Leakage Current (Ir)-
Current - Rectified75A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650V) applications. Compared to silicon MOSFET and IGBT solutions, SiC MOSFET and SiC Schottky Barrier Diode product lines improve system efficiency while reducing total cost of ownership by enabling system miniaturization and allowing the use of smaller/lower-cost thermal management solutions.

The ultra-fast, low gate charge MOSFET series combines the industry's lowest gate charge with Microchip's proprietary self-aligned aluminum metal gate structure. The result is a MOSFET capable of extremely fast switching speeds and ultra-low switching losses. The metal gate structure and layout of these dies provide an internal series gate resistance (EGR) that is an order of magnitude lower than competing devices using polysilicon gates. These devices are ideal for high-frequency and pulsed high-voltage applications.

Features

AI Translation
  • Stable R<sub>DS(on)</sub> over temperature
  • High avalanche performance — unclamped inductive switching (UIS) and repetitive UIS
  • Long short-circuit withstand time
  • No lifetime degradation of internal body diode
  • Multiple qualified sources for substrate and epitaxial materials
  • Dual manufacturing capability
  • No product discontinuation policy
  • Competitive lead times
  • Broad power switching portfolio — discretes, die, and modules
  • Microchip's Total System Solution (TSS) — power stage, gate driver, and control solutions
  • Expertise and support in industrial and automotive sectors
  • Series gate resistance (R<sub>G</sub>) < 0.1 Ω
  • Rise time (T<sub>R</sub>) and fall time (T<sub>F</sub>) < 10 ns
  • Industry-lowest gate charge

Applications

AI Translation
  • Transportation/Automotive: EV: battery chargers, HEV powertrains, DC-DC converters, energy recovery
  • Data Centers: UPS, PDU, PSU (PFC/LLC resonant converters)
  • Industrial: induction heating, motor drives, SMPS, UPS, welding
  • Smart Energy: energy storage, PV inverters, wind (turbines)
  • Medical: MRI power supplies, X-ray power supplies
  • Class D amplifiers up to 2 MHz
  • High-voltage pulsed DC
  • AM transmitters
  • Plasma deposition/etching