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DOINGTER NH025T2G-LRoHS

Manufacturer
DOINGTERAsian Brands
MPN
NH025T2G-L
LCSC Part #
C54300817
Packaging
DFN-8(5x6)
Customer #
Key Attributes
22W 100V 30A 1.7V 18mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER NH025T2G-L
In-Stock: 1,365
1,365 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.0802$ 0.40
50+$ 0.0784$ 3.92
150+$ 0.0773$ 11.60
500+$ 0.0761$ 38.05
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN-8(5x6)
Output Capacitance(Coss)179pF
Pd - Power Dissipation22W
ConfigurationStandalone
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)5.1pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
Gate Charge(Qg)11nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(on)) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 100V, ID = 30A, RDS(ON) < 25mΩ (typical 18mΩ at VGS = 10V)
  • Low gate charge
  • Eco-friendly device options available
  • Advanced high cell-density SGT technology for ultra-low RDS(ON)
  • Excellent package with superior thermal dissipation
  • MSL3