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DOINGTER ZH014T2G-LRoHS

Manufacturer
DOINGTERAsian Brands
MPN
ZH014T2G-L
LCSC Part #
C54110310
Packaging
DFN-8(3x3)
Customer #
Key Attributes
100V 35A 1.7V 45W 11mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER ZH014T2G-L
In-Stock: 60
60 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0898$ 0.45
50+$ 0.0879$ 4.40
150+$ 0.0866$ 12.99
500+$ 0.0852$ 42.60
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN-8(3x3)
Drain to Source Voltage100V
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)312pF
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation45W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)6pF
Number1 N-channel
Input Capacitance(Ciss)1.4nF
Gate Charge(Qg)19nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET, utilizing advanced SGT technology and design, delivers excellent on-resistance (RDS(ON)) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 100V, ID = 35A, RDS(ON) < 14mΩ (typical 11mΩ at VGS = 10V)
  • Low gate charge
  • Green device options available
  • Advanced high cell density SGT technology for ultra-low RDS(ON)
  • Excellent package with good thermal dissipation
  • MSL3