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onsemi FQD2N60CTMRoHS

Manufacturer
onsemi
MPN
FQD2N60CTM
LCSC Part #
C5386
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET N-CH 600V 1.9A TO-252(DPAK)
Datasheetpdf icononsemi FQD2N60CTM
In-Stock: 2,242
2,242 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.7757$ 0.78
10+$ 0.6423$ 6.42
30+$ 0.5757$ 17.27
100+$ 0.509$ 50.90
500+$ 0.4049$ 202.45
1,000+$ 0.3838$ 383.80
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-252(DPAK)
Drain to Source Voltage600V
Current - Continuous Drain(Id)1.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)4.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)235pF
Gate Charge(Qg)12nC@480V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

AI Translation
  • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
  • This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
  • 1.9A, 600V, RDS(on)=4.7Ω @ VGS=10V
  • Low gate charge ( typical 8.5 nC)
  • Low Crss ( typical 4.3 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

AI Translation
  • high efficiency switched mode power supplies
  • active power factor correction
  • electronic lamp ballasts based on half bridge topology