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Infineon IRS21084SPBF
| Manufacturer | |
| MPN | IRS21084SPBF |
| LCSC Part # | C538258 |
| Packaging | SOIC-14 |
| Customer # | |
| Key Attributes | 10V~20V 250mA 120mA SOIC-14 Gate Drivers RoHS |
| Datasheet |  Infineon IRS21084SPBF |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | Infineon | |
| Packaging | SOIC-14 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 1mA | |
| Input Logic Level - High | - | |
| Operating Temperature | -40℃~+150℃ | |
| Voltage - Supply | 10V~20V | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 250mA | |
| Rise Time | 100ns | |
| Fall Time | 35ns | |
| Features | Under Voltage Protection;Interleaved conduction protection;Dead-time control | |
| Current - Output High(IOH) | 120mA | |
| Load Type | MOSFET;IGBT |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1980 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The IRS2108/IRS21084 are high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HViC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V
Features
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V, and 15 V input logic compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High-side output in phase with HIN input
- Low-side output out of phase with LIN input
- Logic and power ground +/-5 V offset
- Internal 540 ns deadtime, and programmable up to 5 μs with one external RDT resistor (IRS21084)
- Lower di/dt gate driver for better noise immunity
- RoHS compliant
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.2351 | $ 2.24 |
| 10+ | $ 1.9081 | $ 19.08 |
| 30+ | $ 1.6381 | $ 49.14 |
| 100+ | $ 1.4268 | $ 142.68 |
| 500+ | $ 1.3327 | $ 666.35 |
| 1,000+ | $ 1.2911 | $ 1291.10 |
Standard Packaging1980/Full Tube | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | Infineon | |
| Packaging | SOIC-14 | |
| Input Logic Level - Low | - | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 1mA | |
| Input Logic Level - High | - | |
| Operating Temperature | -40℃~+150℃ | |
| Voltage - Supply | 10V~20V | |
| Driven Configuration | Half-Bridge | |
| Current - Output Low(IOL) | 250mA | |
| Rise Time | 100ns | |
| Fall Time | 35ns | |
| Features | Under Voltage Protection;Interleaved conduction protection;Dead-time control | |
| Current - Output High(IOH) | 120mA | |
| Load Type | MOSFET;IGBT |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1980 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The IRS2108/IRS21084 are high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HViC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V
Features
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V, and 15 V input logic compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High-side output in phase with HIN input
- Low-side output out of phase with LIN input
- Logic and power ground +/-5 V offset
- Internal 540 ns deadtime, and programmable up to 5 μs with one external RDT resistor (IRS21084)
- Lower di/dt gate driver for better noise immunity
- RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |