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Infineon IRLR2705TRPBFRoHS

Manufacturer
Infineon
MPN
IRLR2705TRPBF
LCSC Part #
C538165
Packaging
DPAK(TO-252AA)
Customer #
Key Attributes
MOSFET N-CH 55V 28A DPAK(TO-252AA)
Datasheetpdf iconInfineon IRLR2705TRPBF
In-Stock: 199
199 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7224$ 0.72
10+$ 0.5952$ 5.95
30+$ 0.5316$ 15.95
100+$ 0.4696$ 46.96
500+$ 0.3848$ 192.40
1,000+$ 0.3653$ 365.30
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingDPAK(TO-252AA)
Drain to Source Voltage55V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)94pF
RDS(on)51mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)880pF
Gate Charge(Qg)25nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

AI Translation
  • Logic-Level Gate Drive
  • Ultra Low On-Resistance
  • Surface Mount (IRLR2705)
  • Straight Lead (IRLU2705)
  • Advanced Process Technology
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free