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Infineon BAT1504WH6327XTSA1 product image
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Infineon BAT1504WH6327XTSA1RoHS

Manufacturer
MPN
BAT1504WH6327XTSA1
LCSC Part #
C5380972
Packaging
SOT323-3
Customer #
Key Attributes
DIODE ARR SCHOTTKY 4V SOT323-3
Datasheetpdf iconInfineon BAT1504WH6327XTSA1

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/RF Diodes
ManufacturerInfineon
PackagingSOT323-3
Non-Repetitive Peak Forward Surge Current-
Current - Rectified110mA
Diode Configuration1 Pair Series Connection
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)5uA@1V
Voltage - Forward(Vf@If)410mV@10mA
DC Reverse Voltage(Vr)4V

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make BAT15-04W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Features

AI Translation
  • Low inductance LS = 1.4 nH (typical)
  • Low capacitance C = 0.3 pF (typical) at 1 MHz
  • Industry standard SOT323-3 package (2 mm x 2.1 mm x 0.9 mm)
  • Pb-free, RoHS compliant and halogen-free

Applications

AI Translation
  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
In-Stock: 1,758
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Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5034$ 0.50
10+$ 0.4107$ 4.11
30+$ 0.3724$ 11.17
100+$ 0.3228$ 32.28
500+$ 0.3005$ 150.25
1,000+$ 0.2877$ 287.70
Standard Packaging3000/Full Reel
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