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Infineon IRG4BC30FDSTRRP product image
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Infineon IRG4BC30FDSTRRPRoHS

Manufacturer
Infineon
MPN
IRG4BC30FDSTRRP
LCSC Part #
C538086
Packaging
D2PAK
Customer #
Key Attributes
FastCoPack IGBT with Hyperfast Diode
Datasheetpdf iconInfineon IRG4BC30FDSTRRP

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingD2PAK
Pd - Power Dissipation100W
Td(off)230ns
Td(on)42ns
Operating Temperature-55℃~+150℃
Current - Collector(Ic)31A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)14pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3V@250uA
Vce Saturation(VCE(sat))1.8V@17A,15V
Reverse Recovery Time(trr)42ns
Switching Energy(Eoff)1.39mJ
Turn-On Energy (Eon)630uJ
Input Capacitance(Cies)11.5pF
Output Capacitance(Coes)74pF
Gate Charge(Qg)51nC@15V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Features

AI Translation
  • Fast: optimized for medium operating frequencies (1 - 5 kHz in hard switching, ≤20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • IGBT co - packaged with HEXFRED ultrafast, ultra - soft recovery anti - parallel diodes for use in bridge configurations.
  • Lead - Free
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QtyUnit Price(Reference Only)Total Amount
1+$ 5.3875$ 5.39
10+$ 5.2692$ 52.69
30+$ 5.1923$ 155.77
100+$ 5.1139$ 511.39
Standard Packaging800/Full Reel
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