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Infineon IRFR3504ZTRPBFRoHS

Manufacturer
Infineon
MPN
IRFR3504ZTRPBF
LCSC Part #
C537966
Packaging
DPAK(TO-252AA)
Customer #
Key Attributes
MOSFET N-CH 40V 42A DPAK(TO-252AA)
Datasheetpdf iconInfineon IRFR3504ZTRPBF
In-Stock: 3,823
3,823 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.4665$ 0.47
10+$ 0.421$ 4.21
30+$ 0.3982$ 11.95
100+$ 0.3608$ 36.08
500+$ 0.3462$ 173.10
1,000+$ 0.3397$ 339.70
Standard Packaging2000/Full Reel

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingDPAK(TO-252AA)
Drain to Source Voltage40V
Current - Continuous Drain(Id)42A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.51nF
Gate Charge(Qg)45nC
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

AI Translation
  • Advanced Process Technology Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free