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Infineon IRFR120ZTRPBFRoHS

Manufacturer
Infineon
MPN
IRFR120ZTRPBF
LCSC Part #
C537949
Packaging
DPAK
Customer #
Key Attributes
100V 8.7A 4V 35W 190mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IRFR120ZTRPBF
In-Stock: 142
142 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.6559$ 0.66
10+$ 0.6413$ 6.41
30+$ 0.6315$ 18.95
100+$ 0.6201$ 62.01
Standard Packaging2000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingDPAK
Drain to Source Voltage100V
Current - Continuous Drain(Id)8.7A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)310pF
Gate Charge(Qg)10nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2000
Sales UnitPiece

Introduction

AI Translation

This HEXFET power MOSFET utilizes the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. These combined characteristics make this design a highly efficient and reliable device suitable for a wide range of applications.

Features

AI Translation
  • Advanced process technology
  • Ultra-low on-resistance
  • 175°C operating temperature
  • Fast switching
  • Repetitive avalanche rated to maximum junction temperature
  • Lead-free