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Infineon IRF7306TRPBFRoHS

Manufacturer
Infineon
MPN
IRF7306TRPBF
LCSC Part #
C537809
Packaging
SO-8
Customer #
Key Attributes
MOSFET P-CH ARR 30V 3.6A SO-8
Datasheetpdf iconInfineon IRF7306TRPBF
In-Stock: 2,023
2,023 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6733$ 0.67
10+$ 0.5465$ 5.47
30+$ 0.4831$ 14.49
100+$ 0.4196$ 41.96
500+$ 0.3822$ 191.10
1,000+$ 0.3627$ 362.70
Standard Packaging4000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerInfineon
PackagingSO-8
Current - Continuous Drain(Id)3.6A
RDS(on)100mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)93pF
Number2 P-Channel
Input Capacitance(Ciss)440pF
Gate Charge(Qg)25nC
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging4000
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Features

AI Translation
  • Generation V Technology
  • Ultra Low On-Resistance
  • Dual P-Channel Mosfet Surface Mount
  • Available in Tape & Reel
  • Dynamic dv/dt Rating
  • Fast Switching
  • Lead-Free