Infineon IRF640NSTRRPBF
| Manufacturer | |
| MPN | IRF640NSTRRPBF |
| LCSC Part # | C537781 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 200V 18A 2V 150W 150mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet |  Infineon IRF640NSTRRPBF |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.16nF | |
| Gate Charge(Qg) | 67nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Fifth Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO - 220 package is universally preferred for all commercial - industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO - 220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX - 4. It provides the highest power capability and the lowest possible on - resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through - hole version (IRF640NL) is available for low profile application.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | D2PAK | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 18A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF | |
| RDS(on) | 150mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.16nF | |
| Gate Charge(Qg) | 67nC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
Fifth Generation HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO - 220 package is universally preferred for all commercial - industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO - 220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX - 4. It provides the highest power capability and the lowest possible on - resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through - hole version (IRF640NL) is available for low profile application.
Features
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Ease of Paralleling
- Simple Drive Requirements
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |