Infineon IRF100P218
| Manufacturer | |
| MPN | IRF100P218 |
| LCSC Part # | C537740 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | MOSFET 100V 483A TO-247-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 3.5nF | |
| Current - Continuous Drain(Id) | 483A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.8V | |
| Pd - Power Dissipation | 556W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 1.28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 24nF | |
| Gate Charge(Qg) | 330nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Ultra-low on-resistance RDS(on)
- Excellent gate charge × RDS(on) (figure of merit FOM)
- Optimized reverse recovery charge Qrr
- 175°C operating temperature
- JEDEC-qualified
- Optimized for broad distribution partner availability
In-Stock: 153
153 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.0914 | $ 7.09 |
| 10+ | $ 6.3076 | $ 63.08 |
| 25+ | $ 5.8426 | $ 146.07 |
| 100+ | $ 5.371 | $ 537.10 |
| 400+ | $ 5.1548 | $ 2061.92 |
| 800+ | $ 5.0572 | $ 4045.76 |
Standard Packaging25/Full Tube | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-247-3 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 3.5nF | |
| Current - Continuous Drain(Id) | 483A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.8V | |
| Pd - Power Dissipation | 556W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 1.28mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 24nF | |
| Gate Charge(Qg) | 330nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Ultra-low on-resistance RDS(on)
- Excellent gate charge × RDS(on) (figure of merit FOM)
- Optimized reverse recovery charge Qrr
- 175°C operating temperature
- JEDEC-qualified
- Optimized for broad distribution partner availability
C537740 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



