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Infineon IR2213SPBF product image
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Infineon IR2213SPBFRoHS

Manufacturer
MPN
IR2213SPBF
LCSC Part #
C537612
Packaging
SOIC-16-300mil
Customer #
Key Attributes
High and Low Side Driver
Datasheetpdf iconInfineon IR2213SPBF
In-Stock: 4
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QtyUnit PriceTotal Amount
1+$ 6.7633$ 6.76
10+$ 6.5975$ 65.98
30+$ 6.4864$ 194.59
100+$ 6.3738$ 637.38
Standard Packaging1980/Full Tube
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerInfineon
PackagingSOIC-16-300mil
Input Logic Level - Low-
Low Level Delay Time280ns
High Level Delay Time225ns
Quiescent Current180uA
Input Logic Level - High-
Operating Temperature-
Voltage - Supply12V~20V
Driven ConfigurationHigh Side;Low Side
Current - Output Low(IOL)2A
Rise Time25ns
Fall Time17ns
FeaturesUnder Voltage Protection;Enable shutdown;Interleaved conduction protection
Current - Output High(IOH)1.7A
Load TypeMOSFET;IGBT

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1980
Sales UnitPiece

Introduction

AI Translation

The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200 V.

Features

AI Translation
  • Floating channel designed for bootstrap operation
  • Fully operational to +1200 V
  • Tolerant to negative transient voltage
  • dV/dt immune
  • Gate drive supply range from 12 V to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V logic compatible
  • Separate logic supply range from 3.3 V to 20 V
  • Logic and power ground ±5 V offset
  • CMOS Schmitt-triggered inputs with pull-down
  • Cycle by cycle edge-triggered shutdown logic
  • Matched propagation delay for both channels
  • Outputs in phase with inputs