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UMW AO6604RoHS

Manufacturer
UMWAsian Brands
MPN
AO6604
LCSC Part #
C5375978
Packaging
SOT-23-6
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 20V 3.4A 2.5A SOT-23-6
Datasheetpdf iconUMW AO6604
In-Stock: 3,435
3,435 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.0834$ 0.42
50+$ 0.0651$ 3.26
150+$ 0.056$ 8.40
500+$ 0.0491$ 24.55
3,000+$ 0.0436$ 130.80
6,000+$ 0.0409$ 245.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingSOT-23-6
Drain to Source Voltage20V;20V
Output Capacitance(Coss)48pF;80pF
Current - Continuous Drain(Id)3.4A;2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV;650mV
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)27pF;70pF
RDS(on)51mΩ@4.5V;56mΩ@-4.5V
Input Capacitance(Ciss)260pF;560pF
Gate Charge(Qg)2.9nC@4.5V;8.5nC@4.5V
TypeN-Channel + P-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

AO6604 combines advanced trench MOSFET technology with a low-resistance package to deliver extremely low RDS(ON). The device is ideal for load switching and battery protection applications.

Features

AI Translation
  • N-Channel:
    • VDS(V) = 20 V
    • RDS(ON) < 65 mΩ (VGS = 10 V)
    • RDS(ON) < 75 mΩ (VGS = 4.5 V)
    • RDS(ON) < 100 mΩ (VGS = 1.8 V)
  • P-Channel:
    • VDS(V) = -20 V
    • RDS(ON) < 75 mΩ (VGS = -4.5 V)
    • RDS(ON) < 95 mΩ (VGS = -2.5 V)
    • RDS(ON) < 115 mΩ (VGS = -1.8 V)

Applications

AI Translation
  • Load switch
  • Battery protection