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Infineon IR21364STRPBF product image
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Infineon IR21364STRPBFRoHS

Manufacturer
MPN
IR21364STRPBF
LCSC Part #
C537592
Packaging
SOIC-28-300mil
Customer #
Key Attributes
11.5V~20V 350mA 200mA SOIC-28-300mil Gate Drivers RoHS
Datasheetpdf iconInfineon IR21364STRPBF
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.7601$ 2.76
10+$ 2.6919$ 26.92
30+$ 2.6463$ 79.39
100+$ 2.6008$ 260.08
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerInfineon
PackagingSOIC-28-300mil
Input Logic Level - Low-
Low Level Delay Time500ns
High Level Delay Time530ns
Quiescent Current600uA
Input Logic Level - High-
Operating Temperature-40℃~+125℃
Voltage - Supply11.5V~20V
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)350mA
Rise Time125ns
Fall Time50ns
FeaturesOver Current Protection;Enable shutdown;Under Voltage Protection;Dead-time control;Interleaved conduction protection
Current - Output High(IOH)200mA
Load TypeMOSFET;IGBT

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

The IR21364(S&J)PBF is a high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Overcurrent fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive Nchannel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.

Features

AI Translation
  • Floating channel designed for bootstrap operation
  • Tolerant to negative transient voltage – dV/dt immune
  • Gate drive supply range from 11.5 V to 20 V
  • Undervoltage lockout for all channels
  • Over-current shutdown turns off all six drivers
  • Independent 3 half-bridge drivers
  • Matched propagation delay for all channels
  • Cross-conduction prevention logic
  • Low side and High side outputs in phase with inputs
  • 3.3 V logic compatible
  • Lower di/dt gate drive for better noise immunity
  • Externally programmable delay for automatic fault clear
  • RoHS Compliant

Applications

AI Translation
  • Motor Control
  • Air Conditioners/ Washing Machines
  • General Purpose Inverters
  • Micro/Mini Inverter Drives