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Infineon IPW60R120C7 product image
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Infineon IPW60R120C7RoHS

Manufacturer
Infineon
MPN
IPW60R120C7
LCSC Part #
C537466
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 600V 31A TO-247
Datasheetpdf iconInfineon IPW60R120C7
In-Stock: 599
599 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 2.9713$ 2.97
10+$ 2.8117$ 28.12
30+$ 2.7182$ 81.55
240+$ 2.6231$ 629.54
480+$ 2.5779$ 1237.39
960+$ 2.5586$ 2456.26
Standard Packaging240/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247
Drain to Source Voltage600V
Current - Continuous Drain(Id)31A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation92W
Reverse Transfer Capacitance (Crss@Vds)515pF
RDS(on)231mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF
Gate Charge(Qg)34nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging240
Sales UnitPiece

Introduction

AI Translation

CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)A below 10 mΩmm².

Features

AI Translation
  • Suitable for hard and soft switching (PFC and high performance LLC)
  • Increased MOSFET dv/dt ruggedness to 120V/ns
  • Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
  • Best in class RDS(on) /package
  • Qualified for industrial grade applications according to JEDEC (J - STD20 and JESD22)

Applications

AI Translation
  • PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS
  • Computing
  • Server
  • Telecom
  • UPS
  • Solar