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Infineon IPW60R099C7 product image
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Infineon IPW60R099C7RoHS

Manufacturer
Infineon
MPN
IPW60R099C7
LCSC Part #
C537460
Packaging
TO-247
Customer #
Key Attributes
MOSFET N-CH 650V 36A TO-247
Datasheetpdf iconInfineon IPW60R099C7
In-Stock: 51
51 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 5.176$ 5.18
10+$ 4.3771$ 43.77
30+$ 3.9007$ 117.02
90+$ 3.421$ 307.89
510+$ 3.199$ 1631.49
990+$ 3.0985$ 3067.52
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247
Drain to Source Voltage650V
Current - Continuous Drain(Id)36A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)641pF
RDS(on)99mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.819nF
Gate Charge(Qg)42nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. 600V CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)A below 10 mΩmm².

Features

AI Translation
  • Suitable for hard and soft switching (PFC and high performance LLC)
  • Increased MOSFET dv/dt ruggedness to 120V/ns
  • Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
  • Best in class RDS(on) /package
  • Qualified for industrial grade applications according to JEDEC (J - STD20 and JESD22)

Applications

AI Translation
  • PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UPS and Solar.