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Infineon IPW60R018CFD7RoHS

Manufacturer
Infineon
MPN
IPW60R018CFD7
LCSC Part #
C537443
Packaging
TO-247-3
Customer #
Key Attributes
650V 64A 3.5V 416W 18mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IPW60R018CFD7
In-Stock: 41
41 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 10.1704$ 10.17
10+$ 9.098$ 90.98
30+$ 8.4444$ 253.33
90+$ 7.8968$ 710.71
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-3
Configuration-
Drain to Source Voltage650V
Current - Continuous Drain(Id)64A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation416W
Reverse Transfer Capacitance (Crss@Vds)3.73nF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.901nF
Gate Charge(Qg)251nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series, a platform specifically optimized for soft-switching applications such as phase-shifted full-bridge (ZVS) and LLC. With reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off characteristics, CoolMOS CFD7 delivers the highest efficiency in resonant topologies. As part of Infineon's fast body diode portfolio, this new product series combines all the advantages of fast switching with outstanding hard-commutation robustness, without compromising ease of implementation during design-in. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability while enabling high power density solutions. Overall, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter, and cooler.

Features

AI Translation
  • Ultra-fast body diode
  • Low gate charge
  • Best-in-class reverse recovery charge (Qrr)
  • Improved dv/dt and diF/dt robustness of MOSFET body diode
  • Lowest figure-of-merit RDS(ON)*Qg and RDS(ON)*Eoss
  • Best-in-class RDS(ON) in SMD and THD packages

Applications

AI Translation
  • Soft-switching topology
  • Phase-shifted full bridge (ZVS), LLC applications — servers, telecom, EV charging
  • Industrial applications