LEADPOWER SS6209L-SO-TP
| Manufacturer | LEADPOWERAsian Brands |
| MPN | SS6209L-SO-TP |
| LCSC Part # | C5370900 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | 30V half-bridge driver |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | LEADPOWER | |
| Packaging | SOP-8 | |
| Input Logic Level - Low | 1V | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 20uA | |
| Input Logic Level - High | 1.2V | |
| Voltage - Supply | 3.3V~5.5V | |
| Operating Temperature | -30℃~+85℃ | |
| Driven Configuration | Half-Bridge;High Side;Low Side | |
| Current - Output Low(IOL) | - | |
| Rise Time | - | |
| Fall Time | - | |
| Current - Output High(IOH) | - | |
| Features | Under Voltage Protection;Enable shutdown;Overtemperature protection (OTP);Dead-time control;Interleaved conduction protection;Built-in bootstrap diode | |
| Load Type | MOSFET |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SS6209 integrates a half-bridge MOSFET driver (high-side + low-side) into an SOP8 package. Compared to discrete component solutions, the integrated solution significantly reduces parasitic effects and board space concerns associated with discrete implementations.
The driver and MOSFETs are optimized for half-bridge applications. The gate drive voltage for both the high-side and low-side MOSFETs operates over a wide voltage range, achieving optimal efficiency. An internal adaptive dead-time circuit further reduces switching losses by preventing simultaneous conduction of both MOSFETs.
When VCC falls below the specified threshold voltage, the UVLO circuit activates to effectively prevent false triggering of the device. The EN pin allows the device to enter a low quiescent current state, extending battery life.
Features
- Maximum rated continuous current 4A, peak 8A
- Bootstrap high-side driver
- Integrated high/low-side MOSFETs
- High-frequency operation (up to 1MHz)
- PWM input compatible with 3.3V and 5V
- Internal bootstrap diode
- Undervoltage lockout
- Thermal shutdown protection
- Adaptive shoot-through protection
Applications
- E-cigarettes
- Wireless charging
- Half-bridge applications
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1905 | $ 0.95 |
| 50+ | $ 0.1649 | $ 8.25 |
| 150+ | $ 0.1539 | $ 23.09 |
| 500+ | $ 0.1378 | $ 68.90 |
| 2,500+ | $ 0.1317 | $ 329.25 |
| 4,000+ | $ 0.128 | $ 512.00 |
Standard Packaging4000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers | |
| Manufacturer | LEADPOWER | |
| Packaging | SOP-8 | |
| Input Logic Level - Low | 1V | |
| Low Level Delay Time | - | |
| High Level Delay Time | - | |
| Quiescent Current | 20uA | |
| Input Logic Level - High | 1.2V | |
| Voltage - Supply | 3.3V~5.5V | |
| Operating Temperature | -30℃~+85℃ | |
| Driven Configuration | Half-Bridge;High Side;Low Side | |
| Current - Output Low(IOL) | - | |
| Rise Time | - | |
| Fall Time | - | |
| Current - Output High(IOH) | - | |
| Features | Under Voltage Protection;Enable shutdown;Overtemperature protection (OTP);Dead-time control;Interleaved conduction protection;Built-in bootstrap diode | |
| Load Type | MOSFET |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The SS6209 integrates a half-bridge MOSFET driver (high-side + low-side) into an SOP8 package. Compared to discrete component solutions, the integrated solution significantly reduces parasitic effects and board space concerns associated with discrete implementations.
The driver and MOSFETs are optimized for half-bridge applications. The gate drive voltage for both the high-side and low-side MOSFETs operates over a wide voltage range, achieving optimal efficiency. An internal adaptive dead-time circuit further reduces switching losses by preventing simultaneous conduction of both MOSFETs.
When VCC falls below the specified threshold voltage, the UVLO circuit activates to effectively prevent false triggering of the device. The EN pin allows the device to enter a low quiescent current state, extending battery life.
Features
- Maximum rated continuous current 4A, peak 8A
- Bootstrap high-side driver
- Integrated high/low-side MOSFETs
- High-frequency operation (up to 1MHz)
- PWM input compatible with 3.3V and 5V
- Internal bootstrap diode
- Undervoltage lockout
- Thermal shutdown protection
- Adaptive shoot-through protection
Applications
- E-cigarettes
- Wireless charging
- Half-bridge applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8542399000 |
| USHTS | 8542390001 |
| TARIC | 8542399000 |
| Type | Details |
|---|---|
| CAHTS | 8542390000 |
| BRHTS | 85423999 |
| INHTS | 85423900 |
| MXHTS | 8542.39.99 |



