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Infineon IPL60R185C7RoHS

Manufacturer
Infineon
MPN
IPL60R185C7
LCSC Part #
C537028
Packaging
VSON-4-EP(8.1x8.1)
Customer #
Key Attributes
600V 21A 3.5V 77W 185mΩ@10V 1 N-channel VSON-4-EP(8.1x8.1) Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IPL60R185C7
In-Stock: 559
559 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.054$ 2.05
10+$ 1.7251$ 17.25
30+$ 1.5187$ 45.56
100+$ 1.3075$ 130.75
500+$ 1.2124$ 606.20
1,000+$ 1.1705$ 1170.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingVSON-4-EP(8.1x8.1)
Drain to Source Voltage600V
Current - Continuous Drain(Id)21A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation77W
Reverse Transfer Capacitance (Crss@Vds)349pF
RDS(on)185mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.08nF
Gate Charge(Qg)24nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

CoolMOS C7 is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS C7 series combines the experience of a leading SJ MOSFET supplier with best-in-class innovation. The 600V C7 is the first technology to achieve an RDS(on) × die area product below 1Ω·mm².

Features

AI Translation
  • Suitable for hard-switching and soft-switching (PFC and high-performance LLC)
  • Enhanced MOSFET dv/dt robustness up to 120V/ns
  • Improved efficiency with best-in-class figure-of-merit RDS(on) * Eoss and RDS(on) * Qg
  • Best-in-class RDS(on)/package ratio
  • SMD package with ultra-low parasitic inductance for easier device control
  • Certified for industrial-grade applications per JEDEC (J-STD20 and JESD22)
  • 4-pin Kelvin source concept

Applications

AI Translation
  • PFC and PWM stages (TTF, LLC) for high-power/high-performance SMPS, including computing, server, telecom, UPS, and solar applications.