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Infineon IPL60R075CFD7RoHS

Manufacturer
Infineon
MPN
IPL60R075CFD7
LCSC Part #
C537017
Packaging
VSON-4(8x8)
Customer #
Key Attributes
MOSFET N-CH 650V 21A VSON-4(8x8)
Datasheetpdf iconInfineon IPL60R075CFD7
In-Stock: 291
291 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 3.0793$ 3.08
10+$ 2.6122$ 26.12
30+$ 2.3209$ 69.63
100+$ 2.0231$ 202.31
500+$ 1.888$ 944.00
1,000+$ 1.8294$ 1829.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingVSON-4(8x8)
Drain to Source Voltage650V
Current - Continuous Drain(Id)21A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation189W
Reverse Transfer Capacitance (Crss@Vds)53pF
RDS(on)75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.721nF
Gate Charge(Qg)67nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. Resulting from reduced gate charge, best-in-class reverse recovery charge and improved turn off behavior CoolMOS CFD7 offers highest efficiency in resonant topologies. As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.

Features

AI Translation
  • Ultra-fast body diode
  • Low gate charge
  • Best-in-class reverse recovery charge (Qrr)
  • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
  • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss
  • Best-in-class RDS(on) in SMD and THD packages

Applications

AI Translation
  • Soft Switching topologies
  • Phase-shift full-bridge (ZVS), LLC Applications – Server, Telecom, EV Charging