Infineon IPI024N06N3 G
| Manufacturer | |
| MPN | IPI024N06N3 G |
| LCSC Part # | C536958 |
| Packaging | TO-262-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 169A TO-262-3 |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.7nF | |
| Current - Continuous Drain(Id) | 169A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17nF | |
| Gate Charge(Qg) | 206nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.7nF | |
| Current - Continuous Drain(Id) | 169A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17nF | |
| Gate Charge(Qg) | 206nC@10V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS P7 is an optimized platform specifically targeting cost-sensitive applications in the consumer market, such as chargers, adapters, lighting, and TVs. This new series offers all the advantages of fast-switching SJ MOSFETs, combined with an excellent price-to-performance ratio and best-in-class ease of use. The technology meets the highest efficiency standards, supports high power density, and enables customers to achieve very slim designs.
Features
- High-frequency switching and synchronous rectification
- Technology optimized for DC/DC converters
- Excellent gate charge × RDS(on) figure of merit (FOM)
- Ultra-low on-resistance RDS(ON)
- N-channel, normally-on
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- JEDEC qualified for target applications
- Halogen-free per IEC61249-2-21
Applications
- Flyback topology for charger, adapter, and lighting applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.4411$ 1.6862 | $ 1.69 |
| 10+ | $ 2.9681$ 1.4544 | $ 14.54 |
| 50+ | $ 2.6862$ 1.3163 | $ 65.82 |
| 100+ | $ 2.4027$ 1.1774 | $ 117.74 |
| 500+ | $ 2.2714$ 1.1130 | $ 556.50 |
| 1,000+ | $ 2.2131$ 1.0845 | $ 1084.50 |
Standard Packaging50/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.7nF | |
| Current - Continuous Drain(Id) | 169A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17nF | |
| Gate Charge(Qg) | 206nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-262-3 | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 3.7nF | |
| Current - Continuous Drain(Id) | 169A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 250W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 17nF | |
| Gate Charge(Qg) | 206nC@10V | |
| Type | N-Channel |
Introduction
CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS P7 is an optimized platform specifically targeting cost-sensitive applications in the consumer market, such as chargers, adapters, lighting, and TVs. This new series offers all the advantages of fast-switching SJ MOSFETs, combined with an excellent price-to-performance ratio and best-in-class ease of use. The technology meets the highest efficiency standards, supports high power density, and enables customers to achieve very slim designs.
Features
- High-frequency switching and synchronous rectification
- Technology optimized for DC/DC converters
- Excellent gate charge × RDS(on) figure of merit (FOM)
- Ultra-low on-resistance RDS(ON)
- N-channel, normally-on
- 100% avalanche tested
- Lead-free plating; RoHS compliant
- JEDEC qualified for target applications
- Halogen-free per IEC61249-2-21
Applications
- Flyback topology for charger, adapter, and lighting applications
C536958 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



