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Infineon IPI024N06N3 GRoHS

Manufacturer
MPN
IPI024N06N3 G
LCSC Part #
C536958
Packaging
TO-262-3
Customer #
Key Attributes
MOSFET N-CH 60V 169A TO-262-3
Datasheetpdf iconInfineon IPI024N06N3 G
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.4411$ 1.6862$ 1.69
10+$ 2.9681$ 1.4544$ 14.54
50+$ 2.6862$ 1.3163$ 65.82
100+$ 2.4027$ 1.1774$ 117.74
500+$ 2.2714$ 1.1130$ 556.50
1,000+$ 2.2131$ 1.0845$ 1084.50
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-262-3
Drain to Source Voltage60V
Output Capacitance(Coss)3.7nF
Current - Continuous Drain(Id)169A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)17nF
Gate Charge(Qg)206nC@10V
TypeN-Channel

Introduction

AI Translation

CoolMOS is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The latest CoolMOS P7 is an optimized platform specifically targeting cost-sensitive applications in the consumer market, such as chargers, adapters, lighting, and TVs. This new series offers all the advantages of fast-switching SJ MOSFETs, combined with an excellent price-to-performance ratio and best-in-class ease of use. The technology meets the highest efficiency standards, supports high power density, and enables customers to achieve very slim designs.

Features

AI Translation
  • High-frequency switching and synchronous rectification
  • Technology optimized for DC/DC converters
  • Excellent gate charge × RDS(on) figure of merit (FOM)
  • Ultra-low on-resistance RDS(ON)
  • N-channel, normally-on
  • 100% avalanche tested
  • Lead-free plating; RoHS compliant
  • JEDEC qualified for target applications
  • Halogen-free per IEC61249-2-21

Applications

AI Translation
  • Flyback topology for charger, adapter, and lighting applications