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R+O HW2EP190S product image
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R+O HW2EP190SRoHS

Manufacturer
R+OAsian Brands
MPN
HW2EP190S
LCSC Part #
C53664482
Packaging
DFN-6(2x2)
Customer #
Key Attributes
25V 22A 1V 2W 19mΩ@10V 1 P-Channel P-Channel DFN-6(2x2) Single FETs, MOSFETs RoHS
Datasheetpdf iconR+O HW2EP190S
In-Stock: 2,415
2,415 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1136$ 0.57
50+$ 0.0905$ 4.53
150+$ 0.0789$ 11.84
500+$ 0.0703$ 35.15
3,000+$ 0.0633$ 189.90
6,000+$ 0.0599$ 359.40
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingDFN-6(2x2)
Drain to Source Voltage25V
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
RDS(on)19mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)167pF
Number1 P-Channel
Input Capacitance(Ciss)1.204nF
Gate Charge(Qg)19.6nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • VDS = -25V
  • ID = -22A
  • RDS(on) < 19mΩ at VGS = -10V
  • R < 45mΩ at V = -4.5V
  • Advanced trench cell design
  • Low thermal resistance
  • Fast switching speed

Applications

AI Translation
  • Load switch for portable devices
  • Voltage-controlled small-signal switch