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Infineon IPB123N10N3 G product image
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Infineon IPB123N10N3 GRoHS

Manufacturer
Infineon
MPN
IPB123N10N3 G
LCSC Part #
C536555
Packaging
TO-263-3
Customer #
Key Attributes
MOSFET N-CH 100V 58A TO-263-3
Datasheetpdf iconInfineon IPB123N10N3 G
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.2104$ 2.21
10+$ 1.8767$ 18.77
30+$ 1.6671$ 50.01
100+$ 1.4529$ 145.29
500+$ 1.3567$ 678.35
1,000+$ 1.3148$ 1314.80
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263-3
Drain to Source Voltage100V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)58A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation94W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)12.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.88nF
Gate Charge(Qg)26nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Features

AI Translation
  • N-channel, normally-on
  • Excellent gate charge × on-resistance RDS(on) product (figure of merit)
  • Ultra-low on-resistance RDS(on)
  • Operating temperature up to 175°C
  • Lead-free pin plating; RoHS compliant
  • JEDEC qualified for target applications
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free per IEC61249-2-21