Infineon IPB117N20NFD
| Manufacturer | |
| MPN | IPB117N20NFD |
| LCSC Part # | C536540 |
| Packaging | TO-263-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 84A TO-263-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 84A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 11.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.65nF | |
| Gate Charge(Qg) | 87nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normal level
- Fast Diode (FD) with reduced Qrr
- Optimized for hard commutation ruggedness
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
In-Stock: 1,578
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.0001 | $ 2.00 |
| 10+ | $ 1.7415 | $ 17.42 |
| 30+ | $ 1.5789 | $ 47.37 |
| 100+ | $ 1.4114 | $ 141.14 |
| 500+ | $ 1.3366 | $ 668.30 |
| 1,000+ | $ 1.3041 | $ 1304.10 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-3 | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 84A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| RDS(on) | 11.7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 6.65nF | |
| Gate Charge(Qg) | 87nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normal level
- Fast Diode (FD) with reduced Qrr
- Optimized for hard commutation ruggedness
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



