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EDA ModelsEasyEDA
Infineon IPB108N15N3 G
| Manufacturer | |
| MPN | IPB108N15N3 G |
| LCSC Part # | C536537 |
| Packaging | TO-263 |
| Customer # | |
| Key Attributes | MOSFET N-CH 150V TO-263 |
| Datasheet |  Infineon IPB108N15N3 G |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 378pF | |
| Current - Continuous Drain(Id) | 83A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 214W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 10.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.23nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge x RDS(on) product (figure of merit)
- Ultra-low on-state resistance RDS(on)
- Operating temperature up to 175 °C
- Lead-free lead finish; RoHS compliant; halogen-free
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 378pF | |
| Current - Continuous Drain(Id) | 83A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 214W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 10.8mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.23nF | |
| Gate Charge(Qg) | 41nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge x RDS(on) product (figure of merit)
- Ultra-low on-state resistance RDS(on)
- Operating temperature up to 175 °C
- Lead-free lead finish; RoHS compliant; halogen-free
- Qualified per JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |