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Infineon IPB031NE7N3 G product image
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Infineon IPB031NE7N3 GRoHS

Manufacturer
Infineon
MPN
IPB031NE7N3 G
LCSC Part #
C536496
Packaging
TO-263
Customer #
Key Attributes
75V 100A 3.8V 214W 3.1mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IPB031NE7N3 G
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.6029$ 1.60
200+$ 0.6216$ 124.32
500+$ 0.5994$ 299.70
1,000+$ 0.5883$ 588.30
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-263
Drain to Source Voltage75V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.13nF
Gate Charge(Qg)117nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Features

AI Translation
  • Optimized for synchronous rectification
  • Ideal for high-frequency switching and DC/DC converters
  • Excellent gate charge × RDS(on) figure of merit (FOM)
  • Ultra-low on-resistance RDS(on)
  • N-channel, normal level
  • 100% avalanche tested
  • Lead-free plating; RoHS compliant
  • Qualified per JEDEC standards for target applications
  • Halogen-free per IEC61249-2-21