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EPC EPC2216 product image
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EPC EPC2216RoHS

Manufacturer
MPN
EPC2216
LCSC Part #
C5362953
Packaging
BGA-6
Customer #
Key Attributes
Enhancement Mode Power Transistor
Datasheetpdf iconEPC EPC2216

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerEPC
PackagingBGA-6
Drain to Source Voltage15V
Current - Continuous Drain(Id)3.4A
Output Capacitance(Coss)66pF
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
TechnologyE-mode
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)20mΩ
Number1 N-channel
Input Capacitance(Ciss)98pF
Gate Charge(Qg)0.87nC
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1500
Sales UnitPiece

Introduction

AI Translation

Gallium Nitride's exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.

Features

AI Translation
  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra Low QG
  • Ultra Small Footprint

Applications

AI Translation
  • High Speed DC-DC conversion
  • Lidar/Pulsed Power Applications
  • Lidar for Augmented Reality Applications
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.0558$ 3.06
10+$ 2.6321$ 26.32
30+$ 2.3807$ 71.42
100+$ 2.1247$ 212.47
500+$ 2.0083$ 1004.15
1,000+$ 1.9539$ 1953.90
Standard Packaging1500/Full Reel
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