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TOSHIBA TK560A65Y,S4X(S product image
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TOSHIBA TK560A65Y,S4X(SRoHS

Manufacturer
TOSHIBA
MPN
TK560A65Y,S4X(S
LCSC Part #
C5361063
Packaging
TO-220SIS
Customer #
Key Attributes
MOSFET N-CH 650V TO-220SIS
Datasheetpdf iconTOSHIBA TK560A65Y,S4X(S
In-Stock: 1,924
1,924 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.6883$ 0.69
10+$ 0.6159$ 6.16
50+$ 0.5797$ 28.99
100+$ 0.5434$ 54.34
500+$ 0.523$ 261.50
1,000+$ 0.5119$ 511.90
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTOSHIBA
PackagingTO-220SIS
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)18pF
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)430mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)380pF
Gate Charge(Qg)14.5nC@10V
TypeN-Channel
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Introduction

AI Translation

PE8688K utilizes advanced trench technology to deliver excellent drain-to-source on-resistance (RDS(ON)) and low gate charge, suitable for a wide range of applications.

Features

AI Translation
  • Low drain-source on-resistance: RDS(ON)=0.43 Ω (typ.) by using Super Junction Structure: DTMOS
  • Easy to control Gate switching
  • Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.24 mA)

Applications

AI Translation
  • Switching Voltage Regulators