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TOSHIBA TK31J60W,S1VE(S product image
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TOSHIBA TK31J60W,S1VE(SRoHS

Manufacturer
TOSHIBA
MPN
TK31J60W,S1VE(S
LCSC Part #
C5361058
Packaging
TO-3P(N)
Customer #
Key Attributes
MOSFET N-CH 600V 30.8A TO-3P(N)
Datasheetpdf iconTOSHIBA TK31J60W,S1VE(S
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QtyUnit Price(Reference Only)Total Amount
1+$ 4.1656$ 4.17
10+$ 3.6879$ 36.88
50+$ 3.389$ 169.45
100+$ 3.0836$ 308.36
500+$ 2.9455$ 1472.75
1,000+$ 2.8854$ 2885.40
Standard Packaging50/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTOSHIBA
PackagingTO-3P(N)
Drain to Source Voltage600V
Current - Continuous Drain(Id)30.8A
Output Capacitance(Coss)70pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.7V
Pd - Power Dissipation230W
Reverse Transfer Capacitance (Crss@Vds)9.5pF
RDS(on)73mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
Gate Charge(Qg)86nC@10V
TypeN-Channel
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Features

AI Translation
  • Low drain-source on-resistance: RDS(ON)=0.073 Ω (typ.) by used to Super Junction Structure: DTMOS
  • Easy to control Gate switching
  • Enhancement mode: Vth = 2.7 to 3.7 V (ΔVDS = 10 V, ID = 1.5 mA)

Applications

AI Translation
  • Switching Voltage Regulators