ST STF9NM60N
| Manufacturer | |
| MPN | STF9NM60N |
| LCSC Part # | C5356985 |
| Packaging | TO-220FP |
| Customer # | |
| Key Attributes | MOSFET N-CH 600V 6.5A TO-220FP |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.45pF | |
| RDS(on) | 745mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 452pF | |
| Gate Charge(Qg) | 17.4nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Features
AI Translation
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
AI Translation
- Switching applications
In-Stock: 50
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.2882 | $ 2.29 |
| 10+ | $ 1.9191 | $ 19.19 |
| 50+ | $ 1.6881 | $ 84.41 |
| 100+ | $ 1.4523 | $ 145.23 |
| 500+ | $ 1.345 | $ 672.50 |
| 1,000+ | $ 1.2994 | $ 1299.40 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.45pF | |
| RDS(on) | 745mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 452pF | |
| Gate Charge(Qg) | 17.4nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Features
AI Translation
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
AI Translation
- Switching applications
C5356985 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



