VBsemi Elec IRF1010EZS-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRF1010EZS-VB |
| LCSC Part # | C5355750 |
| Packaging | D2PAK(TO-263) |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 150A D2PAK(TO-263) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | D2PAK(TO-263) | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 715pF | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 220W | |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7nF | |
| Gate Charge(Qg) | 96nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Low thermal resistance package
- 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
- RoHS compliant
- Halogen-free
- N-channel MOSFET
In-Stock: 696
696 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0925 | $ 1.09 |
| 10+ | $ 0.8854 | $ 8.85 |
| 30+ | $ 0.781 | $ 23.43 |
| 100+ | $ 0.631 | $ 63.10 |
| 500+ | $ 0.5691 | $ 284.55 |
| 800+ | $ 0.5381 | $ 430.48 |
Standard Packaging800/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | D2PAK(TO-263) | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 715pF | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 220W | |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7nF | |
| Gate Charge(Qg) | 96nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Low thermal resistance package
- 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
- RoHS compliant
- Halogen-free
- N-channel MOSFET
C5355750 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



