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Slkor IRF7341
| Manufacturer | SlkorAsian Brands |
| MPN | IRF7341 |
| LCSC Part # | C5355495 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 5A SOP-8 |
| Datasheet |  Slkor IRF7341 |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Slkor | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 36mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.02nF | |
| Gate Charge(Qg) | 19nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This dual N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 60 V, drain current (ID) = 5 A, on-resistance (RDS(ON)) < 36 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package thermal dissipation performance.
In-Stock: 145
145 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2232 | $ 1.12 |
| 50+ | $ 0.1748 | $ 8.74 |
| 150+ | $ 0.154 | $ 23.10 |
| 500+ | $ 0.1281 | $ 64.05 |
| 3,000+ | $ 0.1175 | $ 352.50 |
| 6,000+ | $ 0.1106 | $ 663.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Slkor | |
| Packaging | SOP-8 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 36mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 1.02nF | |
| Gate Charge(Qg) | 19nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This dual N-channel MOSFET utilizes advanced trench technology and design to achieve excellent on-resistance (RDS(on)) at low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- Drain-source voltage (VDS) = 60 V, drain current (ID) = 5 A, on-resistance (RDS(ON)) < 36 mΩ at gate-source voltage (VGS) = 10 V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package thermal dissipation performance.
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |