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TOSHIBA TPN19008QM,LQRoHS

Manufacturer
TOSHIBA
MPN
TPN19008QM,LQ
LCSC Part #
C5354423
Packaging
TSON-8(3.1x3.1)
Customer #
Key Attributes
MOSFET N-CH 80V 38A TSON-8(3.1x3.1)
Datasheetpdf iconTOSHIBA TPN19008QM,LQ
In-Stock: 1,623
1,623 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.6033$ 0.60
10+$ 0.4826$ 4.83
30+$ 0.4223$ 12.67
100+$ 0.362$ 36.20
500+$ 0.3261$ 163.05
1,000+$ 0.3082$ 308.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTOSHIBA
PackagingTSON-8(3.1x3.1)
Drain to Source Voltage80V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)38A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)14.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.02nF
Gate Charge(Qg)16nC@10V
TypeN-Channel
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Introduction

AI Translation

WCR250N65DV is a next-generation high-voltage MOSFET utilizing an advanced charge balance mechanism, featuring excellent low on-resistance and low gate charge characteristics. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates and higher avalanche energy. The device is suitable for AC/DC power conversion in various switch-mode operations to achieve higher efficiency.

Features

AI Translation
  • High-speed switching
  • Small gate charge: Qsw = 5.5 nC (typ.)
  • Small output charge: Qoss = 16.5 nC (typ.)
  • Low drain-source on-resistance: RDS(ON) = 14.7 mΩ (typ.) (VGS = 10 V)
  • Low leakage current: ΔIDSS = 10 μA (max) (VDS = 80 V)
  • Enhancement mode: Vth = 2.5 to 3.5 V (ΔVDS = 10 V, ID = 0.2 mA)

Applications

AI Translation
  • High-Efficiency DC-DC Converters
  • Switching Voltage Regulators
  • Motor Drivers