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Infineon FS150R12KT4 product image
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Infineon FS150R12KT4RoHS

Manufacturer
Infineon
MPN
FS150R12KT4
LCSC Part #
C535435
Packaging
Through Hole,122x62mm
Customer #
Key Attributes
IGBT-Module with trench/fieldstop IGBT4 and emitter controlled 4 diode
Datasheetpdf iconInfineon FS150R12KT4

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,122x62mm
Td(off)370ns
Pd - Power Dissipation750W
Td(on)115ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)350pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.8V@5.3mA
Gate Charge(Qg)1.25uC
Operating Temperature-40℃~+150℃
Vce Saturation(VCE(sat))2.1V@150A,15V
Switching Energy(Eoff)10mJ
Turn-On Energy (Eon)5mJ
Input Capacitance(Cies)9.35nF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging10
Sales UnitPiece
In-Stock: 5
5 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 67.6589$ 67.66
Standard Packaging10/Full Tray
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