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TECH PUBLIC IRF7103TRPBF(TP) product image
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TECH PUBLIC IRF7103TRPBF(TP)RoHS

Manufacturer
TECH PUBLICAsian Brands
MPN
IRF7103TRPBF(TP)
LCSC Part #
C5350808
Packaging
SOP-8
Customer #
Key Attributes
Dual N-Channel Enhancement Mode Power MOSFET
Datasheetpdf iconTECH PUBLIC IRF7103TRPBF(TP)
In-Stock: 2,485
2,485 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.2127$ 1.06
50+$ 0.1838$ 9.19
150+$ 0.1714$ 25.71
500+$ 0.1559$ 77.95
3,000+$ 0.149$ 447.00
6,000+$ 0.1448$ 868.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTECH PUBLIC
PackagingSOP-8
Drain to Source Voltage60V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2W
RDS(on)26mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)100pF
Number2 N-Channel
Input Capacitance(Ciss)979pF
Gate Charge(Qg)22nC@10V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This P-channel MOSFET with a nominal operating voltage of 2.5V is a rugged gate version of Fairchild Semiconductor's advanced "Power Trench" process. It is optimized for power management applications with a wide gate drive voltage range (2.5V to 12V).

Features

AI Translation
  • VDS = 60V, ID = 6A
  • RDs(on) < 35mΩ @ Vgs = 10V
  • RDS(ON) < 45mΩ @ VGS = 4.5V

Applications

AI Translation
  • Load/Power Switching
  • Interfacing
  • Switching
  • Logic Level Shift