HXY MOSFET RFVS8TG6SGC9-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | RFVS8TG6SGC9-HXY |
| LCSC Part # | C53468158 |
| Packaging | TO-220C-2L |
| Customer # | |
| Key Attributes | 50ns 600V 1 Independent 1.5V@8A 8A TO-220C-2L Single Diodes RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220C-2L | |
| Reverse Recovery Time (trr) | 50ns | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@8A | |
| Reverse Leakage Current (Ir) | 10uA@600V | |
| Current - Rectified | 8A | |
| Non-Repetitive Peak Forward Surge Current | 100A |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High-frequency operation
- High surge forward current capability
- High-purity, high-temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- Guard ring for improved durability and long-term reliability
- Wave soldering per JESD 22-B106: max. 275°C for 7 seconds
Applications
AI Translation
Switching power supplies, converters, freewheeling diodes, and reverse battery protection
In-Stock: 24
24 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7346$ 0.5877 | $ 0.59 |
| 10+ | $ 0.595$ 0.4760 | $ 4.76 |
| 50+ | $ 0.5268$ 0.4215 | $ 21.08 |
| 100+ | $ 0.4586$ 0.3669 | $ 36.69 |
| 500+ | $ 0.4173$ 0.3339 | $ 166.95 |
| 1,000+ | $ 0.3951$ 0.3161 | $ 316.10 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | HXY MOSFET | |
| Packaging | TO-220C-2L | |
| Reverse Recovery Time (trr) | 50ns | |
| Voltage - DC Reverse (Vr) (Max) | 600V | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1.5V@8A | |
| Reverse Leakage Current (Ir) | 10uA@600V | |
| Current - Rectified | 8A | |
| Non-Repetitive Peak Forward Surge Current | 100A |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High-frequency operation
- High surge forward current capability
- High-purity, high-temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- Guard ring for improved durability and long-term reliability
- Wave soldering per JESD 22-B106: max. 275°C for 7 seconds
Applications
AI Translation
Switching power supplies, converters, freewheeling diodes, and reverse battery protection
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



