VISHAY SQ4284EY-T1_GE3
| Manufacturer | |
| MPN | SQ4284EY-T1_GE3 |
| LCSC Part # | C5346013 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 40V 8A SO-8 |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 3.9W | |
| RDS(on) | 13.5mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 40V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 252pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 3.9W | |
| RDS(on) | 13.5mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 252pF |
Introduction
Truesemi Super Junction FETs (SJ-FET) are a new generation of high-voltage MOSFET series, utilizing an advanced charge balance mechanism to deliver excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, provide superior switching performance, and withstand extremely high dv/dt rates and higher avalanche energy. SJ-FETs are suitable for AC/DC power conversion in various switch-mode operations to achieve higher efficiency.
Features
- TrenchFET Power MOSFET
- AEC-Q101 qualified
- 100 % Rg and UIS tested
- RoHS COMPLIANT HALOGEN FREE
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.3493 | $ 2.35 |
| 10+ | $ 2.3119 | $ 23.12 |
| 30+ | $ 2.2891 | $ 68.67 |
| 100+ | $ 2.2648 | $ 226.48 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 3.9W | |
| RDS(on) | 13.5mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 40V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 252pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 8A | |
| Pd - Power Dissipation | 3.9W | |
| RDS(on) | 13.5mΩ@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Drain to Source Voltage | 40V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 116pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 45nC@10V | |
| Operating Temperature | -55℃~+175℃ | |
| Output Capacitance(Coss) | 252pF |
Introduction
Truesemi Super Junction FETs (SJ-FET) are a new generation of high-voltage MOSFET series, utilizing an advanced charge balance mechanism to deliver excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, provide superior switching performance, and withstand extremely high dv/dt rates and higher avalanche energy. SJ-FETs are suitable for AC/DC power conversion in various switch-mode operations to achieve higher efficiency.
Features
- TrenchFET Power MOSFET
- AEC-Q101 qualified
- 100 % Rg and UIS tested
- RoHS COMPLIANT HALOGEN FREE
C5346013 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



