XNRUSEMI XRS80N10T
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XRS80N10T |
| LCSC Part # | C53454481 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | 100V 80A 1.7V 111W 5mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Output Capacitance(Coss) | 806pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 111W | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.615nF | |
| Gate Charge(Qg) | 44nC@50V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for low R<sub>DS(ON)</sub>
Applications
AI Translation
- DC-DC converter
- Power management function
- Synchronous rectification applications
In-Stock: 50
50 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4354$ 0.4137 | $ 0.41 |
| 10+ | $ 0.3457$ 0.3285 | $ 3.29 |
| 50+ | $ 0.3066$ 0.2913 | $ 14.57 |
| 100+ | $ 0.2577$ 0.2449 | $ 24.49 |
| 500+ | $ 0.2365$ 0.2247 | $ 112.35 |
| 1,000+ | $ 0.2234$ 0.2123 | $ 212.30 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | TO-220AB | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 80A | |
| Output Capacitance(Coss) | 806pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Pd - Power Dissipation | 111W | |
| RDS(on) | 5mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.615nF | |
| Gate Charge(Qg) | 44nC@50V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for low R<sub>DS(ON)</sub>
Applications
AI Translation
- DC-DC converter
- Power management function
- Synchronous rectification applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



