XNRUSEMI XRS1005L
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XRS1005L |
| LCSC Part # | C53454480 |
| Packaging | SOT-23-3L |
| Customer # | |
| Key Attributes | 100V 5A 1.95V 1W 95mΩ@10V 1 N-channel N-Channel SOT-23-3L Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | SOT-23-3L | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 25.9pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.95V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21.4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 196pF | |
| Gate Charge(Qg) | 4.3nC@50V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
XRS1005L is a high cell density trench N-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. XRS1005L complies with RoHS standards and green product requirements, and has passed full-function reliability certification.
Features
AI Translation
- RoHS-compliant green devices
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
In-Stock: 2,870
2,870 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0424$ 0.0403 | $ 0.40 |
| 100+ | $ 0.0337$ 0.0321 | $ 3.21 |
| 300+ | $ 0.0294$ 0.0280 | $ 8.40 |
| 3,000+ | $ 0.0262$ 0.0249 | $ 74.70 |
| 6,000+ | $ 0.0236$ 0.0225 | $ 135.00 |
| 9,000+ | $ 0.0224$ 0.0213 | $ 191.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | SOT-23-3L | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 5A | |
| Output Capacitance(Coss) | 25.9pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.95V | |
| Pd - Power Dissipation | 1W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 21.4pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 196pF | |
| Gate Charge(Qg) | 4.3nC@50V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
XRS1005L is a high cell density trench N-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. XRS1005L complies with RoHS standards and green product requirements, and has passed full-function reliability certification.
Features
AI Translation
- RoHS-compliant green devices
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



