XNRUSEMI XRS15N10D
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XRS15N10D |
| LCSC Part # | C53454479 |
| Packaging | PDFN-8L(3.3x3.3) |
| Customer # | |
| Key Attributes | 100V 15A 1.8V 46W 61mΩ@10V 1 N-channel N-Channel PDFN-8L(3.3x3.3) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | PDFN-8L(3.3x3.3) | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 58pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 46W | |
| RDS(on) | 61mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 228pF | |
| Gate Charge(Qg) | 3.7nC@50V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for low on-resistance
Applications
AI Translation
- DC-DC converter
- Power management function
- Synchronous rectification application
In-Stock: 2,655
2,655 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0847$ 0.0805 | $ 0.40 |
| 50+ | $ 0.0674$ 0.0641 | $ 3.21 |
| 150+ | $ 0.0588$ 0.0559 | $ 8.39 |
| 500+ | $ 0.0524$ 0.0498 | $ 24.90 |
| 2,500+ | $ 0.0472$ 0.0449 | $ 112.25 |
| 5,000+ | $ 0.0446$ 0.0424 | $ 212.00 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | PDFN-8L(3.3x3.3) | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 58pF | |
| Current - Continuous Drain(Id) | 15A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Pd - Power Dissipation | 46W | |
| RDS(on) | 61mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.9pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 228pF | |
| Gate Charge(Qg) | 3.7nC@50V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Split-gate trench MOSFET technology
- Superior thermal dissipation package
- High-density cell design for low on-resistance
Applications
AI Translation
- DC-DC converter
- Power management function
- Synchronous rectification application
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



