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XNRUSEMI XR3415L product image
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XNRUSEMI XR3415LRoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XR3415L
LCSC Part #
C53454468
Packaging
SOT-23-3L
Customer #
Key Attributes
20V 5A 650mV 1.08W 30mΩ@4.5V 1 P-Channel P-Channel SOT-23-3L Single FETs, MOSFETs RoHS
Datasheetpdf iconXNRUSEMI XR3415L
In-Stock: 2,690
2,690 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0462$ 0.0439$ 0.44
100+$ 0.0368$ 0.0350$ 3.50
300+$ 0.0321$ 0.0305$ 9.15
3,000+$ 0.0286$ 0.0272$ 81.60
6,000+$ 0.0258$ 0.0246$ 147.60
9,000+$ 0.0244$ 0.0232$ 208.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingSOT-23-3L
Drain to Source Voltage20V
Current - Continuous Drain(Id)5A
Output Capacitance(Coss)123pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation1.08W
RDS(on)30mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)105pF
Number1 P-Channel
Input Capacitance(Ciss)1.022nF
Gate Charge(Qg)9.5nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

XR3415L is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR3415L complies with RoHS standards and green product requirements, and has passed full-function reliability qualification. The ESD rating is 2500V Human Body Model (HBM).

Features

AI Translation
  • Ultra-low gate charge
  • Available in green/eco-friendly package
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology