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XNRUSEMI XR2N20L product image
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XNRUSEMI XR2N20LRoHS

Manufacturer
XNRUSEMIAsian Brands
MPN
XR2N20L
LCSC Part #
C53454417
Packaging
SOT-23-3L
Customer #
Key Attributes
200V 2A 2.1V 2.5W 480mΩ@10V 1 N-channel N-Channel SOT-23-3L Single FETs, MOSFETs RoHS
Datasheetpdf iconXNRUSEMI XR2N20L
In-Stock: 1,550
1,550 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0808$ 0.0768$ 0.38
50+$ 0.0644$ 0.0612$ 3.06
150+$ 0.0562$ 0.0534$ 8.01
500+$ 0.05$ 0.0475$ 23.75
3,000+$ 0.0451$ 0.0429$ 128.70
6,000+$ 0.0426$ 0.0405$ 243.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingSOT-23-3L
Drain to Source Voltage200V
Output Capacitance(Coss)24pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)480mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)495pF
Gate Charge(Qg)12nC@100V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

XR2N20L is a high cell density trench N-channel MOSFET, offering excellent on-resistance (RDSON) and gate charge for most synchronous buck converter applications. XR2N20L complies with RoHS and green product requirements.

Features

AI Translation
  • Ultra-low gate charge
  • 100% guaranteed EAS
  • Green device options available
  • Excellent CdV/dt immunity
  • Advanced high cell density trench technology