XNRUSEMI XR50N04F
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XR50N04F |
| LCSC Part # | C53454415 |
| Packaging | PDFN-8L(5x6) |
| Customer # | |
| Key Attributes | 40V 50A 1.5V 20W 11mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | PDFN-8L(5x6) | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A | |
| Output Capacitance(Coss) | 109pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 20W | |
| RDS(on) | 11mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 96pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 964pF | |
| Gate Charge(Qg) | 22.9nC@20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
XR50N04F is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR50N04F complies with RoHS and green product requirements, is 100% EAS guaranteed, and has passed full-function reliability qualification.
Features
AI Translation
- RoHS-compliant green devices
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
In-Stock: 4,910
4,910 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1116$ 0.1061 | $ 0.53 |
| 50+ | $ 0.0889$ 0.0845 | $ 4.23 |
| 150+ | $ 0.0776$ 0.0738 | $ 11.07 |
| 500+ | $ 0.069$ 0.0656 | $ 32.80 |
| 2,500+ | $ 0.0622$ 0.0591 | $ 147.75 |
| 5,000+ | $ 0.0588$ 0.0559 | $ 279.50 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | PDFN-8L(5x6) | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 50A | |
| Output Capacitance(Coss) | 109pF | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 20W | |
| RDS(on) | 11mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 96pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 964pF | |
| Gate Charge(Qg) | 22.9nC@20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
XR50N04F is a high cell density trench N-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR50N04F complies with RoHS and green product requirements, is 100% EAS guaranteed, and has passed full-function reliability qualification.
Features
AI Translation
- RoHS-compliant green devices
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



