Infineon BSC12DN20NS3 G
| Manufacturer | |
| MPN | BSC12DN20NS3 G |
| LCSC Part # | C534415 |
| Packaging | TDSON-8-EP(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V TDSON-8-EP(5x6) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-EP(5x6) | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 39pF | |
| Current - Continuous Drain(Id) | 11.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.1pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 510pF | |
| Gate Charge(Qg) | 6.5nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x RDS(on) product (FOM)
- Low on-resistance RDS(on)
- 150 ℃ operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
In-Stock: 100
100 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8717 | $ 0.87 |
| 10+ | $ 0.8522 | $ 8.52 |
| 30+ | $ 0.8393 | $ 25.18 |
| 100+ | $ 0.8247 | $ 82.47 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-EP(5x6) | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 39pF | |
| Current - Continuous Drain(Id) | 11.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 50W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.1pF | |
| RDS(on) | 125mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 510pF | |
| Gate Charge(Qg) | 6.5nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x RDS(on) product (FOM)
- Low on-resistance RDS(on)
- 150 ℃ operating temperature
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
C534415 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



