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DOINGTER ZD5R5NGRoHS

Manufacturer
DOINGTERAsian Brands
MPN
ZD5R5NG
LCSC Part #
C53433523
Packaging
DFN-8(3x3)
Customer #
Key Attributes
40V 70A 1.6V 52W 4.2mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconDOINGTER ZD5R5NG
In-Stock: 690
690 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1412$ 0.71
50+$ 0.1125$ 5.63
150+$ 0.0981$ 14.72
500+$ 0.0874$ 43.70
2,500+$ 0.0788$ 197.00
5,000+$ 0.0745$ 372.50
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDOINGTER
PackagingDFN-8(3x3)
Drain to Source Voltage40V
Output Capacitance(Coss)233pF
Current - Continuous Drain(Id)70A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)152pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.41nF
Gate Charge(Qg)25nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET utilizes advanced trench technology and design to deliver excellent on-resistance (RDS(ON)) with low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • VDS = 40V, ID = 70A, VGS = 10V; RDS(ON) < 5.5mΩ (typical: 4.2mΩ)
  • Low gate charge
  • Green/eco-friendly devices available
  • Ultra-low RDS(ON) achieved via advanced high cell density trench technology
  • Excellent package with superior thermal dissipation
  • Moisture Sensitivity Level 3 (MSL3)