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MSKSEMI FDC606P-MSRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
FDC606P-MS
LCSC Part #
C5343314
Packaging
SOT-23-6
Customer #
Key Attributes
MOSFET P-CH 20V 4.5A SOT-23-6
Datasheetpdf iconMSKSEMI FDC606P-MS
In-Stock: 2,455
2,455 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.0949$ 0.0807$ 0.40
50+$ 0.075$ 0.0638$ 3.19
150+$ 0.065$ 0.0553$ 8.30
500+$ 0.0575$ 0.0489$ 24.45
3,000+$ 0.0515$ 0.0438$ 131.40
6,000+$ 0.0485$ 0.0413$ 247.80
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23-6
Drain to Source Voltage20V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)540pF
Gate Charge(Qg)6.4nC@4.5V
TypeP-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency, fast-switching applications.

Features

AI Translation
  • -20V, -4.5A, R DS(ON) = 40mΩ at V GS = -4.5V
  • Improved dv/dt capability
  • Fast switching
  • Available in eco-friendly versions

Applications

AI Translation
  • Laptops - Load Switches - Network Equipment