MSKSEMI FDC606P-MS
| Manufacturer | MSKSEMIAsian Brands |
| MPN | FDC606P-MS |
| LCSC Part # | C5343314 |
| Packaging | SOT-23-6 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 4.5A SOT-23-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23-6 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 540pF | |
| Gate Charge(Qg) | 6.4nC@4.5V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency, fast-switching applications.
Features
AI Translation
- -20V, -4.5A, R DS(ON) = 40mΩ at V GS = -4.5V
- Improved dv/dt capability
- Fast switching
- Available in eco-friendly versions
Applications
AI Translation
- Laptops - Load Switches - Network Equipment
In-Stock: 2,455
2,455 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0949$ 0.0807 | $ 0.40 |
| 50+ | $ 0.075$ 0.0638 | $ 3.19 |
| 150+ | $ 0.065$ 0.0553 | $ 8.30 |
| 500+ | $ 0.0575$ 0.0489 | $ 24.45 |
| 3,000+ | $ 0.0515$ 0.0438 | $ 131.40 |
| 6,000+ | $ 0.0485$ 0.0413 | $ 247.80 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MSKSEMI | |
| Packaging | SOT-23-6 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 1.56W | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 40mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 540pF | |
| Gate Charge(Qg) | 6.4nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency, fast-switching applications.
Features
AI Translation
- -20V, -4.5A, R DS(ON) = 40mΩ at V GS = -4.5V
- Improved dv/dt capability
- Fast switching
- Available in eco-friendly versions
Applications
AI Translation
- Laptops - Load Switches - Network Equipment
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



