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MSKSEMI FDN338PRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
FDN338P
LCSC Part #
C5343313
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 20V 2A SOT-23
Datasheetpdf iconMSKSEMI FDN338P
In-Stock: 800
800 In stock, ships now
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QtyUnit PriceTotal Amount
10+$ 0.0432$ 0.0389$ 0.39
100+$ 0.0339$ 0.0306$ 3.06
300+$ 0.0293$ 0.0264$ 7.92
3,000+$ 0.0258$ 0.0233$ 69.90
6,000+$ 0.023$ 0.0207$ 124.20
9,000+$ 0.0216$ 0.0195$ 175.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23
Drain to Source Voltage20V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation1.56W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)85mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)180pF
Gate Charge(Qg)3nC@4.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These P-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideal for high-efficiency, fast-switching applications.

Features

AI Translation
  • -20V, -2.0A, R<sub>DS(ON)</sub> = 85mΩ at V<sub>GS</sub> = -4.5V
  • Improved dv/dt capability
  • Fast switching
  • Green devices available

Applications

AI Translation
  • Laptop - Load Switch - Handheld Instrument