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MSKSEMI FDV302PRoHS

Manufacturer
MSKSEMIAsian Brands
MPN
FDV302P
LCSC Part #
C5343311
Packaging
SOT-23
Customer #
Key Attributes
MOSFET P-CH 30V 200mA SOT-23
Datasheetpdf iconMSKSEMI FDV302P
In-Stock: 2,330
2,330 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0435$ 0.0414$ 0.41
100+$ 0.0349$ 0.0332$ 3.32
300+$ 0.0306$ 0.0291$ 8.73
3,000+$ 0.0273$ 0.0260$ 78.00
6,000+$ 0.0248$ 0.0236$ 141.60
9,000+$ 0.0235$ 0.0224$ 201.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMSKSEMI
PackagingSOT-23
Drain to Source Voltage30V
Output Capacitance(Coss)15.1pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)4Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)30.5pF
Gate Charge(Qg)2.8nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These P-channel enhancement-mode power MOSFETs are fabricated using Trench DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.

Features

AI Translation
  • -30V, -1.5A, R DS(ON) = 900mΩ at VGS = -10V
  • Fast switching
  • Green devices available
  • Suitable for -2.5V gate drive applications

Applications

AI Translation
  • Laptop - Load Switch - Battery Protection - Handheld Instruments